作為德國(guó)POINT ELECTRONIC  (PE) 公司中國(guó)區(qū)總代理，裕隆時(shí)代向用戶(hù)提供專(zhuān)業(yè)的的電子束吸收電流分析系統(tǒng)EBAC/RCI。

EBAC/RCI電子束吸收電流分析系統(tǒng)，能夠方便快速的定位半導(dǎo)體芯片電路中的短路及失效點(diǎn)位置，不但可以對(duì)同層電路，而且可以對(duì)次表層，甚至表層下第三層、第四層電路進(jìn)行失效點(diǎn)的準(zhǔn)確定位，因此能夠?qū)Π雽?dǎo)體芯片電路或相關(guān)材料進(jìn)行快速準(zhǔn)確的失效分析。

目前，集成電路芯片設(shè)計(jì)越來(lái)越復(fù)雜，關(guān)鍵尺寸和金屬連線(xiàn)線(xiàn)寬越來(lái)越小，傳統(tǒng)的失效點(diǎn)定位方法，如微光顯微鏡或光束又到電阻變化鞥，由于其分辨率不足，導(dǎo)致不能精確地定位電路故障點(diǎn)位置，電壓襯度方法雖然在一些開(kāi)路短路失效分析中能快速地定位失效點(diǎn)，但只是局限于電路同層分析。

EBAC/RCI電子束吸收電流分析系統(tǒng)是基于掃描電鏡的分析系統(tǒng)，在保留掃描電鏡高分辨率的前提下，能夠?qū)ν瑢有酒娐愤M(jìn)行高準(zhǔn)確定位，同時(shí)能夠?qū)Υ伪韺由踔帘砻嫦碌谌?、第四層電路進(jìn)行失效點(diǎn)定位，因此越來(lái)越多的應(yīng)用于先進(jìn)制程芯片的失效分析。在涉及多層金屬層的失效定位分析時(shí)，EBAC/RCI方法更加簡(jiǎn)便精確，可保證分析的成功率，并縮短分析周期。

EBAC/RCI acquisition

The lowest noise Electron Beam Absorbed Current (EBAC)
and Resistive Contrast Imaging (RCI)   

Find exact location of any open,resistive or shorting defect
 

• Localize metal line cuts caused by cracking,corrosion, electro-migration, or foreign particles

• Identify resistive opens caused by interface contamination at via interconnects

• Pinpoint location for direct TEM lamella FIB preparation 

Characterize interconnects with highest resolution
 

• Reveal electrical integrity of nets with sub-mciron lateral resolution and bridge from EFA to PFA

• Diagnose fabrication and long term issues, including contamination,metal pattering defects, resistive interconnectors, or electro-migration

• Directly isolate defects to the exact layer and die location, and improve them to product improvement actions
   

Verify device operation modes with built-in biasing for voltage contrast

• Image bias/voltage contrast in delayered devices

• Monitor operation of devices under bias

• Compare imaged behaviour with device design

Localize defects in thin dielectric layers 

• Visualise and localise weaknesses in gate oxide (GOX) and capacitor oxide (COX) before breakdown

• Pinpoint oxides shorts caused by ESD or EOS with sub-micron resolution

• Preserve the original defect signature with power dissipation in the lower nW range during localization

Access failures invisible in voltage contrast

• Find low resistances that allow charge tunneling trough the interconnects

• Investigate structures in contact with the silicon substrate

• Characterize large metal structures

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